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revisions ltr description date (yr-mo-da) approved a add packages t and w. add vendor cage 60395 as source of supply. increase data retention to 20 years, minimum. redrawn with changes. 93-06-29 m. a. frye b changes in accordance with nor 5962-r139-94. 94-03-29 m. a. frye c changes in accordance with nor 5962-r278-94. 94-09-19 m. a. frye d changes in accordance with nor 5962-r163-96. 96-06-27 m. a. frye e updated boilerplate. added device types 16-18 and packages m and n to drawing along with vendor cage 0eu86 as supplier. removed figures 9, 10 and 11 software data protect algorithms. removed vendor 61395 as supplier. - glg 98-07-22 raymond monnin f corrected dimensions for packages "m" and "n". - glg 99-10-06 raymond monnin g added device 19, packages 6 and 7, and updated boilerplate. ksr 01- 10- 05 raymond monnin the original first page of th is drawing has been replaced. rev g g g sheet 35 36 37 rev g g g g g g g g g g g g g g g g g g g g sheet 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 rev status of sheets rev g g g g g g g g g g g g g g sheet 1 2 3 4 5 6 7 8 9 10 11 12 13 14 pmic n/a prepared by kenneth rice defense supply center columbus columbus, ohio 43216 standard microcircuit drawing this drawing is available for use by all departments and agencies of the department of defense amsc n/a checked by charles reusing microcircuit, memory, digital, cmos 128k x 8 bit eeprom, monolithic silicon approved by charles e. besore drawing approval date 91-07-12 size a cage code 67268 5962-38267 revision level g sheet 1 of 37 dscc form 2233 apr 97 5962-e561-01 distribution statement a . approved for public release; distribution is unlimited.
standard microcircuit drawing defense supply center columbus columbus, ohio 43216-5000 size a 5962-38267 revision level g sheet 2 dscc form 2234 apr 97 1. scope 1.1 scope . this drawing documents two product assurance class levels consisting of high reliability (device classes q and m) and space application (device class v). a choice of case outlines and lead finishes are available and are reflected in the part or identifying number (pin). when available, a choice of radiat ion hardness assurance (rha) leve ls are reflected in the pin. 1.2 pin . the pin shall be as shown in the following example: 5962 - 38267 01 q x x | | | | | | | | | | | | | | | | | | federal rha device device case lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) \ / (see 1.2.3) \/ drawing number 1.2.1 rha designator . device classes q and v rha marked devices meet the mil-prf-38535 specified rha levels and are marked with the appropriate rha designator. device class m rha marked devices meet the mil-prf-38535, appendix a specified rha levels and are marked with the appropriate rha designator. a dash (-) indicates a non-rha device. 1.2.2 device type(s) . the device type(s) shall identify the circuit function as follows: software generic data device type number circuit function access time write speed write mode endurance protect 01,16 1 / 128k x 8 eeprom 250 ns 10 ms byte/page 10,000 cycle yes 02 128k x 8 eeprom 250 ns 5 ms byte/page 10,000 cycle yes 03,17 128k x 8 eeprom 200 ns 10 ms byte/page 10,000 cycle yes 04 128k x 8 eeprom 200 ns 5 ms byte/page 10,000 cycle yes 05,18 128k x 8 eeprom 150 ns 10 ms byte/page 10,000 cycle yes 06 128k x 8 eeprom 150 ns 5 ms byte/page 10,000 cycle yes 07,19 128k x 8 eeprom 120 ns 10 ms byte/page 10,000 cycle yes 08 128k x 8 eeprom 120 ns 3 ms byte/page 10,000 cycle yes 09 128k x 8 eeprom 90 ns 10 ms byte/page 10,000 cycle yes 10 128k x 8 eeprom 90 ns 3 ms byte/page 10,000 cycle yes 11 128k x 8 eeprom 70 ns 10 ms byte/page 10,000 cycle yes 12 128k x 8 eeprom 70 ns 3 ms byte/page 10,000 cycle yes 13 128k x 8 eeprom 120 ns 3 ms byte/page 10,000 cycle yes 14 128k x 8 eeprom 90 ns 3 ms byte/page 10,000 cycle yes 15 128k x 8 eeprom 70 ns 3 ms byte/page 10,000 cycle yes 1.2.3 device class designator . the device class designator shall be a single letter identifying the product assurance level as follows: device class device requirements documentation m vendor self-certification to the requirements for mil-std- 883 compliant, non-jan class level b microcircuits in a ccordance with mil-prf-38535, appendix a q or v certification and qualification to mil-prf-38535 1 / generic numbers are listed on t he standard microcircuit drawing so urce approval bulletin at the end of this document and will also be listed in qml-38535 and mil-hdbk-103.
standard microcircuit drawing defense supply center columbus columbus, ohio 43216-5000 size a 5962-38267 revision level g sheet 3 dscc form 2234 apr 97 1.2.4 case outline(s) . the case outline(s) shall be as designated in mil-std-1835 and as follows: outline letter descriptive designator terminals package style x gdip1-t32 or cdip2-t32 32 dual in-line y cqcc1-n44 44 square chip carrier z see figure 1 32 flat package u cqcc1-n32 32 rectangular chip carrier t see figure 1 30 grid array w see figure 1 36 grid array m see figure 1 32 flat package n see figure 1 32 flat package 6 see figure 1(enhanced rad tolerant) 32 flat package 7 see figure 1(enhanced rad tolerant) 32 flat package 1.2.5 lead finish . the lead finish is as specified in mil-prf-38535 for device classes q and v or mil-prf-38535, appendix a for device class m. 1.3 absolute maximum ratings . 1 / 2 / supply voltage range (v ) ............................ -0.5 v dc to +6.0 v dc 3 / cc operating case temperature range ...................... -55 c to +125 c storage temperature range ............................ -65 c to +150 c lead temperature (soldering, 10 seconds) ................ +300 c thermal resistance, junction-to-case ( ): jc cases x, y and u ................................... see mil-std-1835 cases t and w .................................... 21 c/w 4 / case z ........................................... 18 c/w 4 / case m ........................................... 3 c/w 4 / case n ........................................... 2 c/w 4 / case 6 ........................................... 1.5 c/w 4 / case 7 ........................................... 1.5 c/w 4 / maximum power dissipation (p ) ........................ 1.0 watts d junction temperature (t ) ............................. +175 c 5 / j endurance ......................................... 10,000 cycles/byte (minimum) data retention ....................................... 20 years minimum 1.4 recommended operating conditions . supply voltage range (v ) ............................ 4.5 v dc minimum to 5.5 v dc maximum cc supply voltage (v ) ................................. 0.0 v dc ss high level input voltage range (v ) ...................... 2.0 v dc to v + 1.0 v dc 6 / ih cc low level input voltage range (v ) ...................... -0.1 v dc to 0.8 v dc il case operating temperature range (t ) .................. -55 c to +125 c c 1.5 digital logic testing for device classes q and v . fault coverage measurement of manufacturing logic tests (mil-std-883, test method 5012) .............. 100 percent 1 / stresses above the absolute maximum rating may cause permanent damage to the device. extended operation at the maximum levels may degrade performance and affect reliability. 2 / all voltages referenced to v (v = ground), unless otherwise specified. ss ss 3 / negative undershoots to a minimum of -1.0 v are allowed with a maximum of 20 ns pulse width. 4 / when the thermal resistance for this case is s pecified in mil-std-1835, that value shall supersede the value indicated herein. 5 / maximum junction temperature shall not be exceeded except for allowable short duration burn-in screening conditions in accordance with method 5004 of mil-std-883. 6 / for device types 16-19 only, v on r e s shall be v - 0.5 v min. to v + 1.0 v max. ih cc cc
standard microcircuit drawing defense supply center columbus columbus, ohio 43216-5000 size a 5962-38267 revision level g sheet 4 dscc form 2234 apr 97 2. applicable documents 2.1 government s pecification, standards, and handbooks . the following specification, standards, and handbooks form a part of this drawing to the extent specified herein. unless otherwise specified, the issues of these documents are those listed in the issu e of the department of defense index of specifications and standards (dodiss) and supplement thereto, cited in the solicitation. specification department of defense mil-prf-38535 - integrated circuits, m anufacturing, general specification for. standards department of defense mil-std-883 - test method standard microcircuits. mil-std-1835 - interface standard for microcircuit case outlines. handbooks department of defense mil-hdbk-103 - list of standard microcircuit drawings. mil-hdbk-780 - standard microcircuit drawings. (unless otherwise indicated, copies of the specification, standards, and handbooks are available from the standardization document order desk, 700 robbins avenue, building 4d, philadelphia, pa 19111-5094). 2.2 non-government publications . the following documents form a part of this document to the extent spec ified herein. unless otherwise specified, the is sues of the documents which are dod adopted are those listed in the issue of the dodiss cited in the solicitation. unless otherwise specified, the issues of documents not listed in the dodiss are the issues of the documents cited in the solicitation. american society for testing and materials (astm) astm standard f1192-88 - standard guide fo r the measurement of single event phenomena from heavy ion irradiation of semiconductor devices. (applications for copies of astm publications should be addr essed to the american society for testing and materials, 1916 race street, philadelphia, pa 19103). electronics industries association (eia) jedec standard eia/jesd78 - i/c latch-up test. (applications for copies should b e addressed to the electronics industries a ssociation, 2500 wilson boulevard, arlington, va 22201). (non-government standards and other publications are normally availabl e from the organizations t hat prepare or distribute the documents. these documents also may be available in or through libraries or other informational services). 2.3 order of precedence . in the event of a confli ct between the text of this drawing and t he references cited herein, the text of this drawing shall take precedence. nothing in this document, however, supers edes applicable laws and regulations unless a specific exemption has been obtained.
standard microcircuit drawing defense supply center columbus columbus, ohio 43216-5000 size a 5962-38267 revision level g sheet 5 dscc form 2234 apr 97 3. requirements 3.1 item requirements . the individual item requirements for device classes q and v shall be in accordance with mil-prf-38535 and as specified he rein or as modified in the device manufacturer's qua lity management (qm) plan. the modification in the qm plan shall not af fect the form, fit, or function as described herein. the individual item requirements for device class m shall be in accordance with mil-prf-38535, appendix a for non-jan class level b devices and as specified herein. 3.2 design, construction, and physical dimensions . the design, construction, and physical di mensions shall be as specified in mil-prf-38535 and herein for device classes q and v or mil-prf-38535, appendix a and herein for device class m. 3.2.1 case outline(s) . the case outline(s) shall be in a ccordance with 1.2.4 herein and figure 1. 3.2.2 terminal connections . the terminal connections s hall be as specified on figure 2. 3.2.3 truth table . the truth table shall be as specified on figure 3. 3.2.3.1 unprogrammed devices . the truth table for unprogrammed devices for contracts involving no altered item drawing shall be as specified on figur e 3 herein. when required, in screening (s ee 4.2 herein), or quality conformance i nspection groups a, b, c , or d (see 4.4 herein), the dev ices shall be programmed by the manufacturer pr ior to test in a checkerboard or similar pattern (a minimum of 50 percent of the total number of bits programmed). 3.2.3.2 programmed devices . the requirements for supplying programm ed devices are not par t of this document. 3.3 electrical performance c haracteristics and postirradi ation parameter limits . unless otherwis e specified herein, the electrical performance chara cteristics and postirradiation parameter limits are as specified in table i and shall apply over the full case operating temperature range. 3.4 electrical test requirements . the electrical test requirements shall be the subgroups specified in t able iia. the electrical tests for each subgroup are defined in table i. 3.5 marking . the part shall be marked with the pin listed in 1.2 herein. in addition, the manufacturer's pin may also be marked as listed in mil-hd bk-103. for packages where marking of the entire smd pin number is not feasible due to space limitations, the manufacturer has the option of not marking the "5962-" on the device. fo r rha product using this option, the rha designator shall still be marked. marking for devi ce classes q and v shall be in accordance with mil-prf-38535. marking for device class m shall be in accordance with mil-prf-38535, appendix a. 3.5.1 certification/com pliance mark . the certification mark for device classes q and v shall be a "qml" or "q" as required in mil-prf-38535. the compliance mark for device class m shall be a "c" as required in mil-prf-38535, appendix a. 3.6 certi ficate of compliance . for device classes q and v, a certificate of compliance shall be required from a qml-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). for device class m, a certificate of compliance shall be required from a manufacturer in order to be listed as an approv ed source of supply in mil-hdbk-103 (see 6.6.2 herein). the certificate of compliance subm itted to dscc-va prior to listing as an approved source of supply for this drawing shall affirm that the manufacturer's product meets, for device classes q and v, the require ments of mil-prf-38535 and herein or for device class m, the requirements of mil-prf-38535, appendix a and herein. 3.7 certificate of conformance . a certificate of conformance as required for device classes q and v in mil-prf-38535 or for device class m in mil-prf-38535, appendix a shall be provided with each lot of microcircuits delivered to this drawing. 3.8 notification of change for device class m . for device class m, notification to dscc-va of change of product (see 6.2 herein) involving devices acquired to this drawing is r equired for any change as defined in mil-prf-38535, appendix a.
standard microcircuit drawing defense supply center columbus columbus, ohio 43216-5000 size a 5962-38267 revision level g sheet 6 dscc form 2234 apr 97 3.9 verification and review for device class m . for device class m, d scc, dscc's agent, and the acquiring activity retain the option to review the manufacturer's facility and applicable required documentation. offshore document ation shall be made available onshore at the option of the reviewer. 3.10 microcircuit group assignment for device class m . device class m devic es covered by this drawing shall be in microcircuit group number 41 (see mil-prf-38535, appendix a). 3.11 processing of eeproms . all testing requirements and quality assurance provisions herein shall be satisfied by the manufacturer prior to delivery. 3.11.1 conditions of the supplied devices . devices will be supplied in an unprogrammed or clear state. no provision will be made for supplying programmed devices. 3.11.2 erasure of eepr oms . when specified, devices s hall be erased in accordance with procedures and characteristics specified in 4.5.1. 3.11.3 program ming of eeproms . when specified, devices shall be programmed in a ccordance with procedures and characteristics specified in 4.5.2. 3.11.4 verification of state of eeproms . when spe cified, devices shall be verified as ei ther written to the specified pattern or cleared. as a minimum, verification shall consist of performing a read of the entire array to verify tha t all bits are in the proper state. any bit that does not verify to be in t he proper state shall consti tute a device failure and the device shall be removed from the lot or sample. 3.11.5 power supply s equence of eeproms . in order to reduce the probability of inadvertant writes, the following power supply sequences s hall be observed. a. for device types 1-19, a logic high state shall be applied to w e and/or c e at the same time or before the application of v . for device types 16-19, an additional precaution is available, a logi c low state shall be applied to r e s at the cc same time or before the application of v . cc b. for device types 1-19, a logic high state shall be a pplied to w e and/or c e at the same time or before the removal of v . for de vice types 16-19 , an additional precaution is available, a logic low state shall be applied to r e s at the cc same time or before the removal of v . cc 3.12 endurance . a reprogrammability test shall be completed as part of the vendor's reliability monitors. this reprog rammability test shall be done for initial characterization and after any design or process changes which may affect the re programmability of the device. the methods and procedures may be vendor specific, but sha ll guarantee the number of program/erase endurance cycles listed in section 1.3 herein over the full military temperature range. the vendor's procedure shall be kept under document c ontrol and shall be made available upon request of the acquiring o r preparing activity, along with test data. 3.13 data retention . a data retention stress test shall be completed as part of the vendor's reliability moni tors. this test shall be done for initial characteriz ation and after any design or process change which may affect data retention. the methods and procedure s may be vendor specific, but shall guarantee the number of y ears listed in section 1.3 herein over the full military t emperature range. the vendor's procedur e shall be kept under document contro l and shall be made available upon request of the acquiring or preparing activity, along with test data.
standard microcircuit drawing defense supply center columbus columbus, ohio 43216-5000 size a 5962-38267 revision level g sheet 7 dscc form 2234 apr 97 4. quality assurance provisions 4.1 sampling and inspection . for device classes q and v, sampling and inspection procedures shall be in accordance with mil- prf-38535 or as modified in the device manufactu rer's quality management (qm) plan. the modi fication in the qm plan shall not affect the form, fit, or function as described herein. for dev ice class m, sampling and inspection procedures shall be in acco r dance with mil-prf-38535, appendix a. 4.2 screening . for device classes q and v, screening shall be in accord ance with mil-prf-38535, and shall be conducted on all devices prior to qualification and tec hnology conformance inspection. for device class m, screening shall be in accor dance with method 5004 of mil-std-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 additional criteria for device class m . a. delet e the sequence specified as initial (preburn-in) electric al parameters through interi m (postburn-in) electrical parameters of method 5004 and substitute lines 1 through 6 of table iia herein. b. prior to burn-in, the devices shall be programmed (see 4.5. 2 herein) with a checkerboard pattern or equivalent (manufacturers at their option may employ an equiva lent pattern provided it is a topologically true alternating bit pattern). the pattern shall be read before and after burn-in. de vices having bits not in the proper state after bur n-in shall constitute a device failure and shall be included in the pda calculation and shall be removed from the lot. c. the test circuit shall be maintained by the manufacturer under doc ument revision level control and shall be made available to t he preparing or acquiring activity upon request. the test ci rcuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015. (1) dynamic burn-in (method 1015 of mil-std-883, test condition d; for circuit, see 4.2.1c herein). d. interim and final electrical parameters s hall be as specified in table iia herein. e. after the completion of all screening, the devic e shall be erased and verified prior to delivery. 4.2.2 additional criteria for device classes q and v . a. the burn-in test duration, test condition and test temperature, o r approved alternatives shall be as specified in the device manufacturer's qm plan in accordance with mil- prf-38535. the burn-in test circuit shall b e maintained under document revision level control of the device manufacturer's technology review board (trb) in accordance with mil-prf-38535 and shall b e made available to the acquiring or preparing activity upon request. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in acc ordance with the intent specified in test method 1015 of mil- std-883. b. interim and final electrical test parameters shall be as specified in table iia herein. c. additional screening for device class v beyond t he requirements of device class q shall be as specified in appendix b of mil-prf-38535. 4.3 qualification inspection for device classes q and v . qualification inspection for device classes q and v shall be in accordance with mil-prf-38535. inspections to be performed shall be those specified in mil-prf-38535 and herein for groups a, b, c, d, and e inspections (see 4.4.1 through 4.4.4). 4.4 conf ormance inspection . technology conformance inspection for classe s q and v shall be in accordance with mil-prf- 38535 including groups a, b, c, d, and e in spections and as specified herein. quality conformance inspection for device class m shall be in accordance with mil-prf-38535, appendix a and as specified herein. inspec tions to be performed for device class m shall be those specified in method 5005 of mil-std-883 and herein for groups a, b, c, d, and e inspections (see 4.4.1 through 4.4.4).
standard microcircuit drawing defense supply center columbus columbus, ohio 43216-5000 size a 5962-38267 revision level g sheet 8 dscc form 2234 apr 97 table i. electrical performanc e characteristics . | | | | | | test |symbol | conditions | group a | device | limits | unit | | -55 c t +125 c |subgroups | types | | | c | | v = 0 v; 4.5 v v 5.5 v | | | min | max | ss cc | | unless otherwise specified | | | | | | | | | | | | high level input current |i |v = 5.5 v, v = 5.5 v | 1, 2, 3 | all | -5 | 5 | a ih cc in | | | | | | | | | | | | | | low level input current |i |v = 5.5 v, v = 0.1 v | 1, 2, 3 | all | -5 | 5 | a il cc in | | | | | | | | | | | | 16-19 | -100 | 100 | | | | for r e s input | | | | | | | | | | | | high impedance output |i |v o e v | 1, 2, 3 | | -10 | 10 | ozh ih cc leakage current 1 / | |v = 5.5 v, v = 5.5 v | | | | | cc o | | | | all | | | a | | | | | | | |i |v o e v | 1, 2, 3 | | -10 | 10 | ozl ih cc | |v = 5.5 v, v = 0.0 v | | | | | cc o | | | | | | | | | | | | | | output high voltage |v |i = -400 a, v = 4.5 v | 1, 2, 3 | all | 2.4 | | v oh oh cc | |v = 2.0 v, v = 0.8 v | | | | | ih il | | | | | | | | | | | | | | output low voltage |v |i = 2.1 ma, v = 4.5 v | 1, 2, 3 | all | | 0.4 | v ol ol cc | |v = 2.0 v, v = 0.8 v | | | | | ih il | | | | | | | | | | | | | | input high voltage 2 / |v |v = 5.5 v | 1, 2, 3 | 01-15 | 2.0 | 6.0 | v ih cc | | | | | | | | | | | 16-19 | 2.2 | 6.0 | | | | | | | | input low voltage 2 / |v |v = 4.5 v | 1, 2, 3 | all | -0.5 | 0.8 | v il cc | | | | | | | | | | | | | | oe high voltage |v | | 1, 2, 3 | 01-15 | 12 | 13 | v h | | | | | | | | | | | |v - |v + | cc cc r e s high voltage | | | | 16-19 | 0.5 | 1.0 | | | | | 01-06, | | | operating supply current |i |v = 5.5 v, we = v , | 1, 2, 3 | 08,13, | | 80 | ma cc1 cc ih | | | | 16,17 | | | | |ce = oe = v | | 07,18, | | 100 | il | |f = 1/t min | | 19 | | | avav | | | | 09-12, | | 120 | | | | | 14,15 | | | | | | | | | | standby supply current |i |v = 5.5 v, ce = v , | 1, 2, 3 | all | | 3 | ma cc2 cc ih ttl | | all i/o's = open, | | | | | | |oe = v , f = 0 hz | | | | | il | | | | | | | | | | | | | | standby supply current |i |v = 5.5 v, ce = v -0.3 v | 1, 2, 3 | 01-07 | | 850 | a cc3 cc cc cmos | | inp uts = v , i/o's = open, | | 08-12 | | 500 | ih | |oe = v , f = 0 hz | | 13-15, | | 350 | il | | | | 16-19 | | | see footnotes at end of table.
standard microcircuit drawing defense supply center columbus columbus, ohio 43216-5000 size a 5962-38267 revision level g sheet 9 dscc form 2234 apr 97 table i. electrical performanc e characteristics - continued. | | | | | | test |symbol | conditions | group a | device | limits | unit | | -55 c t +125 c |subgroups | types | | | c | | v = 0 v; 4.5 v v 5.5 v | | | min | max | ss cc | | unless otherwise specified | | | | | | | | | | | | input capacitance 3 / 4 / |c |v = 0 v, f = 1.0 mhz, | 4 | all | | 10.0 | pf in in | |t = +25 c, see 4.4.1c | | | | | c | | | | | | | | | | | | | | output capacitance 3 / 4 / |c |v = 0 v, f = 1.0 mhz | 4 | all | | 12.0 | pf out out | |t = +25 c, see 4.4.1c | | | | | c | | | | | | | | | | | | | | functional tests | | see 4.4.1d | 7,8a,8b | all | | | | | | | | | | | | | | | | | | | see figures 4, 5, and 6 as | |01-02,16 | 250 | | | | applicable. 5 / | |03-04,17 | 200 | | | | | |05-06,18 | 150 | | read cycle time |t | |9, 10, 11 | 07,08, | 120 | | ns avav | | | | 13,19 | | | | | | | 09,10, | 90 | | | | | | 14 | | | | | | | 11,12, | 70 | | | | | | 15 | | | | | | | | | | | | | |01-02,16 | | 250 | | | | |03-04,17 | | 200 | address access time |t | |9, 10, 11 |05-06,18 | | 150 | avqv | | | | 07,08, | | 120 | ns | | | | 13,19 | | | | | | | 09,10, | | 90 | | | | | 14 | | | | | | | 11,12, | | 70 | | | | | 15 | | | | | | | | | | | | | |01-02,16 | | 250 | | | | |03-04,17 | | 200 | ce access time |t | |9, 10, 11 |05-06,18 | | 150 | elqv | | | | 07,08, | | 120 | ns | | | | 13,19 | | | | | | | 09,10, | | 90 | | | | | 14 | | | | | | | 11,12, | | 70 | | | | | 15 | | | | | | | | | | oe access time |t | |9, 10, 11 | 01-06 | | 55 | ns olqv | | | | 07-15 | | 50 | | | | | 16-19 | | 75 | | | | | | | | ce to output in low z |t | |9, 10, 11 | all | 0 | | ns elqx 4 / | | | | | | | | | | | | | | | | | | | | | chip disable to output |t | |9, 10, 11 | 01-06 | | 55 | ns ehqz in high z 4 / | | | | 07-19 | | 50 | | | | | | | | see footnotes at end of table.
standard microcircuit drawing defense supply center columbus columbus, ohio 43216-5000 size a 5962-38267 revision level g sheet 10 dscc form 2234 apr 97 table i. electrical performanc e characteristics - continued. | | | | | | test |symbol | conditions | group a | device | limits | unit | | -55 c t +125 c |subgroups | types | | | c | | v = 0 v; 4.5 v v 5.5 v | | | min | max | ss cc | | unless otherwise specified | | | | | | | | | | | | oe to output in low z |t |see figures 4, 5, and 6 as |9, 10, 11 | all | 0 | | ns olqx 4 / | | applicable. 5 / | | | | | | | | | | | | | | | | | | | output disable to output |t | |9, 10, 11 | 01-06 | | 55 | ns ohqz in high z 4 / | | | | 07-19 | | 50 | | | | | | | | | | | | | | | output hold from address |t | |9, 10, 11 | all | 0 | | ns axqx change | | | | | | | | | | | | | | | | | | 01,03, | | | | | | | 05,07, | | | | | |9, 10, 11 | 09,11, | | 10 | write cycle time |t | | | 16-19 | | | ms whwl1 |t | | | 02,04 | | | ehel1 | | | | 06 | | 5 | | | | | 08,10, | | 3 | | | | | 12-15 | | | | | | | | | | address setup time |t | |9, 10, 11 | all | 0 | | ns avwl |t | | | | | | avel | | | | | | | | | | | 16-19 | 150 | | address hold time |t | |9, 10, 11 | 01-08, | 70 | | ns wlax |t | | | 13 | | | elax | | | | 09-12, | | | | | | | 14,15 | 50 | | | | | | | | | write setup time |t | |9, 10, 11 | all | 0 | | ns elwl |t | | | | | | wlel | | | | | | | | | | | | | | write hold time |t | |9, 10, 11 | all | 0 | | ns wheh |t | | | | | | ehwh | | | | | | | | | | | | | | oe setup time |t | |9, 10, 11 | 01-15 | 10 | | ns ohwl |t | | | | | | ohel | | | | 16-19 | 0 | | | | | | | | | oe hold time |t | |9, 10, 11 | 01-15 | 10 | | ns whol |t | | | | | | ehol | | | | 16-19 | 0 | | | | | | | | | write pulse width (page |t | |9, 10, 11 | 01-15 | 100 | | ns wlwh or byte write) |t | | | | | | eleh | | | | 16-19 | 250 | | | | | | 16-19 | 100 | | data setup time |t | |9, 10, 11 | 01-08, | 60 | | ns dvwh |t | | | 13 | | | dveh | | | | 09-12, | 40 | | | | | | 14,15 | | | see footnotes at end of table.
standard microcircuit drawing defense supply center columbus columbus, ohio 43216-5000 size a 5962-38267 revision level g sheet 11 dscc form 2234 apr 97 table i. electrical performanc e characteristics - continued. | | | | | | test |symbol | conditions | group a | device | limits | unit | | -55 c t +125 c |subgroups | types | | | c | | v = 0 v; 4.5 v v 5.5 v | | | min | max | ss cc | | unless otherwise specified | | | | | | | | | 01-07 | | | data hold time |t |see figures 4, 5, and 6 as |9, 10, 11 | 16-19 | 10 | | ns whdx |t | applicable. 5 / | | 08-15 | 0 | | ehdx | | | | | | | | | | | | | | byte load cycle |t | |9, 10, 11 | 01-15 | .20 | 149 | s whwl2 | | | | | | | | | | | 16-19 | .3 | 30 | | | | | | | | | | | |01-02,16 | | 250 | | | | |03-04,17 | | 200 | last byte loaded to data |t | |9, 10, 11 |05-06,18 | | 150 | whel polling |t | | |07,08, | | 120 | ns ehel | | | |13,19 | | | | | | |09,10, | | 90 | | | | |14 | | | | | | |11,12, | | 70 | | | | |15 | | | | | | | | | | ce setup time |t |see figures 4, 5, and 6 as |9, 10, 11 | 01-15 | 5 | | s elwl (chip erase) | | applicable. 5 / 6 / | | | | | | | | | | | | | | | | | | | oe setup time |t | |9, 10, 11 | 01-15 | 5 | | s ovhwl (chip erase) | | | | | | | | | | | | | | | | | | 01-07 | 10 | | ms we pulse width (chip |t | |9, 10, 11 | | | | wlwh2 erase) | | | | 08-15 | 10 | | s | | | | | | | | | | | | | | ce hold time |t | |9, 10, 11 | 01-15 | 5 | | s wheh (chip erase) | | | | | | | | | | | | | | | | | | | | | oe hold time (chip erase) |t | |9, 10, 11 | 01-15 | 5 | | s whoh | | | | | | | | | | | | | | high voltage |v | |9, 10, 11 | 01-15 | 12 | 13 | v h (chip erase) | | | | | | | | | | | | | | | | | | | | | clear recovery |t | |9, 10, 11 | 01-15 | | 50 | ms olel (chip erase) | | | | | | | | | | | | | | | | | | | | | data setup time |t | |9, 10, 11 | 01-15 | 1 | | s dhwl (chip erase) 7 / | | | | | | | | | | | | | | | | | | | | | data hold time during |t | |9, 10, 11 | 01-15 | 1 | | s whdx chip erase cycle 7 / | | | | | | | | | | | | | | see footnotes at end of table.
standard microcircuit drawing defense supply center columbus columbus, ohio 43216-5000 size a 5962-38267 revision level g sheet 12 dscc form 2234 apr 97 table i. electrical performanc e characteristics - continued. | | | | | | test |symbol | conditions | group a | device | limits | unit | | -55 c t +125 c |subgroups | types | | | c | | v = 0 v; 4.5 v v 5.5 v | | | min | max | ss cc | | unless otherwise specified | | | | | | | | | | | | r e s low to output float |t |see figures 4, 5, and 6 as |9, 10, 11 | 16-19 | 0 | 350 | ns dfr | | applicable. 5 / 8 / | | | | | | | | | | | | | | | | | | | r e s to output delay |t | |9, 10, 11 | 16-19 | 0 | 450 | ns rr | | | | | | | | | | | | | | reset protect time |t | |9, 10, 11 | 16-19 | 100 | | s rp | | | | | | | | | | | | | | reset high time |t | |9, 10, 11 | 16-19 | 1.0 | | s res | | | | | | | | | | | | | | time to device busy |t | |9, 10, 11 | 16-19 | 120 | | ns db | | | | | | | 1 / connect all address inputs and o e to v and measure i and i with the output under test connected to v . ih ozl ozh out terminal conditions for the output leakage current test shall be as follows: a. v = 2.0 v for device types 01-15 and 2.2 v for device types 16-19; v = 0.8 v. ih il b. for i : select an appropriate address to acquire a logic "1" on the designated output. apply v to c e . ozl ih measure the leakage current while applying the specified voltage. c. for i : select an appropriate address to acquire a logic "0" on the designated output. apply v to c e . ozh ih measure the leakage current while applying the specified voltage. 2 / a functional test shall verify the dc input and out put levels and applicable patterns as appropriate, all input and i/o pins shall be tested. terminal conditions are as follows: a. inputs: h =2.0 v for device types 01-15 and 2.2 v for dev ice types 16-19; l = 0.8 v. outputs: h = 2.4 v minimum and l = 0.4 v maximum. b. the functional tests shall be performed with v = 4.5 and v = 5.5 v. cc cc 3 / all pins not being tested are to be open. 4 / tested initially and after any design or process changes which may affect that param eter, and therefore shall be guaranteed to the limits specified in table i. 5 / tested by application of specified timing signals and conditions. equivalent ac test conditions: output load, see figure 5; input rise and fall times 10 ns; input pulse levels, 0.4 v and 2.4 v; timing measurement reference levels, inputs, 1.5 v for device types 1-15 and 1 v and 2 v for device types 16-19; outputs, 1.5 v for device types 1-15 and 0.8 v and 2 v for device types 16-19. 6 / chip erase functions are app licable to device types 01-15 only. 7 / this parameter not applicable for internal timer controlled devices. 8 / r e s functions are applicable to device types 16-19 only.
standard microcircuit drawing defense supply center columbus columbus, ohio 43216-5000 size a 5962-38267 revision level g sheet 13 dscc form 2234 apr 97 4.4.1 group a inspection . a. tests shall be as specified in table iia herein. b. subgroups 5 and 6 in table i, method 5005 of mil-std-883 shall be omitted. c. subgroup 4 (c and c measurements) shall be measured only for initial qualification and after any process or design in out changes which may affect input or output capacitanc e. capacitance shall be measur ed between the designated terminal and gnd at a frequency of 1 mhz. sample size is 15 devic es with no failures and all input and output terminals tested. d. for device class m, subgroups 7 and 8 tests shall be sufficient to verify the truth table. for device classes q and v, subgroups 7 and 8 shall include verifying the functionality of the device, these tests shall have been fault graded in accordance with mil-std-883, test method 5012 (see 1.5 herein). e. o/v (latc h-up) tests shall be measured only for initial qualificat ion and after any design or process changes which may affect the performance of the device. for device class m, procedures and circuits shall be maintained under document revision le vel control by the manufacturer and shall be made availabl e to the preparing activity or acquiring activity upon request. for device classes q and v, the pro cedures and circuits shall be under the control of the device manufacturer's trb in accordance with mil-prf-38535 and shall be made available to the preparing activity or acquiring activity upon reques t. testing shall be on all pins, on five devices with zero failures. latch-up test shall be considered destructive. information contained in jedec standard eia/jesd78 may be used for reference. f. all devices selected for testing shall be programmed with a c heckerboard pattern or equivalent. after completion of all testing, the devices shall be erased and verified, (e xcept devices submitted for groups c and d testing). 4.4.2 group c inspection . the group c inspection end-point electrical paramet ers shall be as specified in table iia herein. 4.4.2.1 additional criteria for device class m . a. steady-state life test conditions, method 1005 of mil-std-883: (1) the device selec ted for testing shall be programmed with a checkerboar d pattern. after completion of all testing, the devices shall be erased and verified (except devices submitted for group d testing). (2) test condition d or e. the test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or ac quiring activity upon request. the test circuit sh all specify the inputs, outputs, biases, and power dissipation, as applicable, in a ccordance with the intent specified in test method 1005. (3) t = +125 c, minimum. a (4) test duration: 1,000 hours, except as specified in method 1005 of mil-std-883. b. all devices requiring end-point electrical testing shall be progr ammed with a checkerboard or equivalent alternating bit pattern. c. after the completion of all testing, the devic es shall be cleared and verified prior to delivery. 4.4.2.2 additional criteria for device classes q and v . the steady-state life test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturer's qm plan in accordance with mil-prf-38535. the test circuit shall b e maintained under document revision level control by t he device manufacturer's trb, in accordance with mil- prf-38535, and shall be made available to the acquiring or prepari ng activity upon request. the test circuit shall specify the inpu ts, outputs, biases, and power dissipation, as applicable, in accordance with th e intent specified in test method 1005 of mil-std-883. 4.4.3 group d inspection . the group d inspection end-point elect rical parameters shall be as specif ied in table iia herein. the devices selected for testing shall be programmed with a checkerboar d pattern. after completion of all testing, the devices shall be erased and verified.
standard microcircuit drawing defense supply center columbus columbus, ohio 43216-5000 size a 5962-38267 revision level g sheet 14 dscc form 2234 apr 97 case t figure 1. case outline .
standard microcircuit drawing defense supply center columbus columbus, ohio 43216-5000 size a 5962-38267 revision level g sheet 15 dscc form 2234 apr 97 case w figure 1. case outline - continued.
standard microcircuit drawing defense supply center columbus columbus, ohio 43216-5000 size a 5962-38267 revision level g sheet 16 dscc form 2234 apr 97 case z figure 1. case outline - continued.
standard microcircuit drawing defense supply center columbus columbus, ohio 43216-5000 size a 5962-38267 revision level g sheet 17 dscc form 2234 apr 97 case z variations (all dimensi ons shown in inches) symbol min max notes a b b1 c c1 d e e1 e2 e3 .090 .015 .015 .004 .004 .430 .330 .030 .120 .020 .019 .007 .006 .830 .488 .498 4 8 e .050 bsc h k .008 1.228 .015 2, 5 k1 .025 ref 2, 5 l q s s1 .270 .026 .005 .370 .045 .045 3 n 32 6 inches mm | inches mm | inches mm .004 0.10 | .020 0.51 | .270 6.86 .005 0.13 | .025 0.64 | .350 8.89 .006 0.15 | .026 0.66 | .370 9.40 .007 0.18 | .030 0.76 | .472 11.99 .008 0.20 | .045 1.14 | .488 12.40 .015 0.38 | .050 1.27 | .498 12.65 .019 0.48 | .120 3.05 | 1.228 31.19 notes: 1. all dimensions and tolerances conform to ansi y14.5m-1982. 2. index area: an identification mark shall be located adjacent to pin 1 within the shaded area shown. alternatively, a tab (dim k) may be used as shown. 3. dimension q shall be measured from the poi nt on the lead located opposite the braze pad. 4. this dimension includes lid thickness. 5. optional, see note 2. if pin 1 identification is used in stead of this tab, the minimum dimension does not apply. 6. (n) indicates number of leads. 7. uses a metal lid. 8. includes braze fillet. 9. metric equivalents are given for general information only. figure 1. case outline - continued.
standard microcircuit drawing defense supply center columbus columbus, ohio 43216-5000 size a 5962-38267 revision level g sheet 18 dscc form 2234 apr 97 case m pin 1 indicator figure 1. case outline - continued.
standard microcircuit drawing defense supply center columbus columbus, ohio 43216-5000 size a 5962-38267 revision level g sheet 19 dscc form 2234 apr 97 case m variations symbol millimeters inches min max min max a a1 b c d d2 e e1 2.46 2.29 .038 0.08 20.57 18.92 10.80 8.38 3.12 2.79 .048 0.18 21.08 19.18 11.30 9.04 .097 .090 .015 .003 .810 .745 .425 .330 .123 .110 .019 .007 .830 .755 .445 .356 e 1.14 1.40 .045 .055 h 25.40 27.94 1.00 1.10 l q 7.37 0.66 7.87 0.94 .290 .026 .310 .037 n 32 note: although di mensions are in inches, the us gov ernment preferred system of measur ement is the metric si system. however, sinc e this item was originally designed using inch- pound units of measurement, in the event of conflict between the two, the inch-pound units shall take precedence. metric equivalents are for general information only. figure 1. case outline - continued.
standard microcircuit drawing defense supply center columbus columbus, ohio 43216-5000 size a 5962-38267 revision level g sheet 20 dscc form 2234 apr 97 case n pin 1 indicator figure 1. case outline - continued.
standard microcircuit drawing defense supply center columbus columbus, ohio 43216-5000 size a 5962-38267 revision level g sheet 21 dscc form 2234 apr 97 case n variations symbol millimeters inches min max min max a a1 b c d d1 d2 e e1 3.18 2.29 0.38 0.08 20.57 19.69 18.92 10.80 7.37 3.81 2.79 0.48 0.18 21.08 19.94 19.18 11.30 7.87 .125 .090 .015 .003 .810 .775 .745 .425 .290 .150 .110 .019 .007 .830 .785 .755 .445 .310 e 1.14 1.40 .045 .055 h 25.40 27.94 1.00 1.10 l q 7.37 0.66 7.87 0.94 .290 .026 .310 .037 n 32 note: although di mensions are in inches, the us gov ernment preferred system of measur ement is the metric si system. however, sinc e this item was originally designed using inch- pound units of measurement, in the event of conflict between the two, the inch-pound units shall take precedence. metric equivalents are for general information only. figure 1. case outline - continued.
standard microcircuit drawing defense supply center columbus columbus, ohio 43216-5000 size a 5962-38267 revision level g sheet 22 dscc form 2234 apr 97 case 6 figure 1. case outline - continued.
standard microcircuit drawing defense supply center columbus columbus, ohio 43216-5000 size a 5962-38267 revision level g sheet 23 dscc form 2234 apr 97 case 6 variations symbol millimeters inches min max min max a b c d e e1 e2 e3 3.07 0.38 0.10 11.99 7.72 0.76 3.81 0.56 0.18 21.08 12.40 7.87 .121 .015 .004 .472 .304 .030 .150 .022 .009 .830 .488 .498 e 1.27 .050 bsc s1 0.13 .005 l q 9.02 0.51 9.53 1.14 .355 .020 .375 .045 n 32 note: although di mensions are in inches, the us gov ernment preferred system of measur ement is the metric si system. however, sinc e this item was originally designed using inch- pound units of measurement, in the event of conflict between the two, the inch-pound units shall take precedence. metric equivalents are for general information only. this package is manufactured for additonal rad tolerant c apabilities, contact the vendor for specific information. figure 1. case outline - continued.
standard microcircuit drawing defense supply center columbus columbus, ohio 43216-5000 size a 5962-38267 revision level g sheet 24 dscc form 2234 apr 97 case 7 figure 1. case outline - continued.
standard microcircuit drawing defense supply center columbus columbus, ohio 43216-5000 size a 5962-38267 revision level g sheet 25 dscc form 2234 apr 97 case 7 variations symbol millimeters inches min max min max a b c d e e1 e2 e3 2.97 .38 0.08 10.26 5.94 0.76 3.63 0.56 0.23 21.08 10.57 11.18 .117 .015 .003 .404 .234 .030 .143 .022 .009 .830 .416 .440 e 1.27 .050 bsc s1 0.13 .005 l q 8.89 0.53 10.41 0.91 .350 .021 .410 .036 n 32 note: although di mensions are in inches, the us gov ernment preferred system of measur ement is the metric si system. however, sinc e this item was originally designed using inch- pound units of measurement, in the event of conflict between the two, the inch-pound units shall take precedence. metric equivalents are for general information only. this package is manufactured for additonal rad tolerant c apabilities, contact the vendor for specific information. figure 1. case outline - continued.
standard microcircuit drawing defense supply center columbus columbus, ohio 43216-5000 size a 5962-38267 revision level g sheet 26 dscc form 2234 apr 97 device types 01 - 15 16 - 19 case outlines x, z, u y w t u m, n,6,7 terminal number terminal symbol 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 nc a16 a15 a12 a7 a6 a5 a4 a3 a2 a1 a0 i/o0 i/o1 i/o2 vss i/o3 i/o4 i/o5 i/o6 i/o7 c e a10 o e a11 a9 a8 a13 a14 nc w e vcc --- --- --- --- --- --- --- --- --- --- --- --- nc nc nc nc a16 a15 a12 a7 a6 a5 nc nc nc a4 a3 a2 a1 a0 i/o0 i/o1 i/o2 vss nc i/o3 i/o4 i/o5 i/o6 i/o7 c e a10 o e nc nc nc nc a11 a9 a8 a13 a14 nc nc w e vcc nc nc nc a16 a15 a12 a7 a6 a5 a4 a3 a2 a1 a0 i/o0 i/o1 i/o2 vss i/o3 i/o4 i/o5 i/o6 i/o7 c e a10 o e a11 a9 a8 a13 a14 nc nc nc w e vcc --- --- --- --- --- --- --- --- a14 a12 a7 a6 a5 a4 a3 a2 a1 a0 i/o0 i/o1 i/o2 vss i/o3 i/o4 i/o5 i/o6 i/o7 c e a10 o e a11 a9 a8 a13 w e vcc a15 a16 --- --- --- --- --- --- --- --- --- --- --- --- --- --- rdy/b u s y a16 a14 a12 a7 a6 a5 a4 a3 a2 a1 a0 i/o0 i/o1 i/o2 vss i/o3 i/o4 i/o5 i/o6 i/o7 c e a10 o e a11 a9 a8 a13 w e r e s a15 vcc --- --- --- --- --- --- --- --- --- --- --- --- rdy/b u s y a16 a14 a12 a7 a6 a5 a4 a3 a2 a1 a0 i/o0 i/o1 i/o2 vss i/o3 i/o4 i/o5 i/o6 i/o7 c e a10 o e a11 a9 a8 a13 w e r e s a15 vcc --- --- --- --- --- --- --- --- --- --- --- --- nc = no connection figure 2. terminal connections .
standard microcircuit drawing defense supply center columbus columbus, ohio 43216-5000 size a 5962-38267 revision level g sheet 27 dscc form 2234 apr 97 device types 01-15 mode c e o e w e i/o read v il v il v ih d out write v il v ih v il d in standby v ih x x high z write inhibit x x v ih d or high z out write inhibit v ih x x high z write inhibit x v il x d or high z out write inhibit v il v il v il no operation software chip clear v il v ih v il d in software write protect v il v ih v il d in high voltage chip clear v il v h v il v ih v = high logic, "1" state, v = low logic, "0" state. ih il x = logic "don't care" state, high z = high impedance state. v = chip clear voltage, d = data out, and h out d = data in. in device types 16-19 mode c e o e w e r e s rdy/b u s y i/o read v il v il v ih v h high z d out standby v ih x x x high z high z write v il v ih v il v h high z to v ol d in deselect v il v ih v ih v h high z high z write inhibit x x v ih x --- --- write inhibit x v il x x --- --- d a t a polling v il v il v ih v h v ol d (i/o7) out program reset x x x v il high z high z v = high logic, "1" state, v = low logic, "0" state. ih il x = logic "don't care" state, high z = high impedance state. d = data in, d = data out, and v = v -0.5 v to v +1.0 v. in out h cc cc . figure 3. truth table .
standard microcircuit drawing defense supply center columbus columbus, ohio 43216-5000 size a 5962-38267 revision level g sheet 28 dscc form 2234 apr 97 read mode waveform note: r e s waveform is applicable to device types 16-19 only. figure 4. waveforms .
standard microcircuit drawing defense supply center columbus columbus, ohio 43216-5000 size a 5962-38267 revision level g sheet 29 dscc form 2234 apr 97 we controlled byte write waveforms note: rdy/b u s y , r e s , and v waveforms are applicable to device types 16-19 only. cc figure 4. waveforms .
standard microcircuit drawing defense supply center columbus columbus, ohio 43216-5000 size a 5962-38267 revision level g sheet 30 dscc form 2234 apr 97 ce controlled byte write waveforms note: rdy/b u s y , r e s , and v waveforms are applicable to device types 16-19 only. cc figure 4. waveforms - continued.
standard microcircuit drawing defense supply center columbus columbus, ohio 43216-5000 size a 5962-38267 revision level g sheet 31 dscc form 2234 apr 97 page write mode cycle waveforms note: rdy/b u s y , r e s , and v waveforms are applicable to device types 16-19 only. cc figure 4. waveforms - continued.
standard microcircuit drawing defense supply center columbus columbus, ohio 43216-5000 size a 5962-38267 revision level g sheet 32 dscc form 2234 apr 97 chip erase waveforms (device types 01-15 only) figure 4. waveforms - continued.
standard microcircuit drawing defense supply center columbus columbus, ohio 43216-5000 size a 5962-38267 revision level g sheet 33 dscc form 2234 apr 97 notes: 1. v and v will be adjusted to meet load conditions of table i. oh ol 2. use this circuit or equivalent circuit. figure 5. switching load circuit .
standard microcircuit drawing defense supply center columbus columbus, ohio 43216-5000 size a 5962-38267 revision level g sheet 34 dscc form 2234 apr 97 table iia. electrical test requirements . 1 / 2 / 3 / 4 / 5 / 6 / 7 / line no. test requirements subgroups (per method 5005, table i) subgroups (per mil-prf-38535, table iii) device class m device class q device class v 1 interim electrical parameters (see 4.2) 1,7,9 or 2,8a,10 1,7,9 or 1,2,8a,10 2 static burn-in i method 1015 not required not required required 3 same as line 1 1*,7* 4 dynamic burn-in (method 1015) required required required 5 same as line 1 1*,7* 6 final electrical parameters 1*,2,3,7*, 8a,8b,9,10,11 1*,2,3,7*, 8a,8b,9,10,11 1*,2,3,7*, 8a,8b,9,10,11 7 group a test requirements 1,2,3,4**,7,8a, 8b,9,10,11 1,2,3,4**,7, 8a,8b,9,10,11 1,2,3,4**,7, 8a,8b,9,10,11 8 group c end-point electrical parameters 2,3,7,8a,8b 1,2,3,7,8a,8b, 9,10, 11 1,2,3,7,8a,8b, 9,10,11 9 group d end-point electrical parameters 2,3,7,8a,8b 2,3,7 8a,8b 2,3,7, 8a,8b 10 group e end-point electrical parameters 1,7,9 1,7,9 1,7,9 1 / blank spaces indicate test are not applicable. 2 / any or all subgroups may be combined when using high-speed testers. 3 / subgroups 7 and 8 functional tests shall verify the truth table. 4 / * indicates pda applies to subgroups 1 and 7. 5 / ** see 4.4.1c. 6 / indicates delta limit (see table iib) shall be required where specified, and the delta values shall be computed with reference to the previ ous interim electrical parameters (see line 1). 7 / see 4.4.1e. table iib. delta limits at +25 c . test 1 / all device types i standby cc3 10% of specified value in table i i , i ih il 10% of specified value in table i i , i ohz olz 10% of specified value in table i 1 / the above parameters shall be recorded before and after the required burn-in and life tests to determine the delta .
standard microcircuit drawing defense supply center columbus columbus, ohio 43216-5000 size a 5962-38267 revision level g sheet 35 dscc form 2234 apr 97 4.4.4 group e inspection . group e inspection is required only for parts intended to be marked as radiation hardness assured (see 3.5 herein). rha levels for device classes m, q, and v shall be as specified in mil-prf-38535. a. end-point electrical param eters shall be as specified in table iia herein. b. for device classes q and v, the devices or test vehicle shall be subjected to radiation hardness assured tests as specified in mil-prf-38535 for the rha level being tested. for device class m, the devices shall be subjected to radiation hardness assured tests as specified in mil-prf-38535, appendix a for the rha level being tested. all device classes must meet the postirradiation end-point electrical param eter limits as defined in table ia at t = +25 c 5 c, after a exposure, to the subgroups s pecified in table iia herein. c. when specified in the purchase order or contract, a copy of the rha delta limits shall be supplied. 4.5 methods of inspection . methods of inspection shall be as specified in the appropriate figures and tables as follows. 4.5.1 erasing procedures . the erasing procedures shall be as specified by the device manufacturer and shall be available upon request. 4.5.2 programming procedure . the programming procedures shall be as specified by the device manufacturer and shall be made available upon request. 4.5.3 software data protect procedures . the software data protect procedures shall be as specified by the device manufacturer and shall be made available upon request. 4.6 delta measurements for device classes q and v . delta measurements, as specified in table iia, shall be made and recorded before and after the requir ed burn-in screens and stea dy-state life tests to determine delta co mpliance. the electrical parameters to be measured, with associated delta limits are listed in table iib. the device manufacturer may, at his option, either perform delta measurements or within 24 hours after burn-in perform fi nal electrical parameter te sts, subgroups 1, 7, and 9. 5. packaging 5.1 packaging requirements . the requirements for packaging shall be in accordance with mil-prf-38535 for device classes q and v or mil-prf-38535, appendix a for device class m. 6. notes 6.1 intended use . microcircuits conforming to this drawing are intended for use for gove rnment microcircuit applications ( original equipment), design applications, and logistics purposes. 6.1.1 replaceability . microcircuits covered by this drawing w ill replace the same generic device covered by a contractor-prepared specification or drawing. 6.1.2 substitutability . device class q devices will replace device class m devices.
standard microcircuit drawing defense supply center columbus columbus, ohio 43216-5000 size a 5962-38267 revision level g sheet 36 dscc form 2234 apr 97 6.2 configuration control of smd's . all pr oposed changes to existing smd's will be coordi nated with the users of record for the individual documents. this coordination will be a ccomplished using dd form 1692, engineering change proposal. 6.3 record of users . military and industrial users should inform defens e supply center columbus when a system application requires configuration control and which smd's are applicable to that system. dscc will maintain a record of users and this list will be used for coordination and distribution of changes to the drawings. users of drawings coveri ng microelectronic devices (fsc 5962) should contact dscc-va, telephone (614) 692-0544 6.4 co mments . comments on this drawing should be directed to dscc-va, columbus, ohio 43216-5000, or telephone (614) 692-0547. 6.5 abb reviations, symbols, and definitions . the abbreviations, symbols, and definit ions used herein are defined in mil-prf- 38535, mil-std-1331, and as follows: c , c ...... input and bidirectional outpu t, terminal-to-gnd capacitance. in out gnd ........... ground zero voltage potential. i ............ supply current. cc i ............. input current low. il i ............ input current high. ih t ............ case temperature. c t ............ ambient temperature. a v ........... positive supply voltage. cc v ............ output enable and write enable voltage during chip erase. h o/v ............ latchup over-voltage. 6.5.1 timing lim its . the table of timing values shows either a mi nimum or a maximum limit for each parameter. input requirem ents are specified from the external syst em point of view. thus, address setup time is shown as a minimum since the system must supply at least tha t much time (even though most devices do not require it). on the other hand, responses from the memory are specified from the device point of view. thus, the access time is shown as a maximum since the device never provides data later than that time. 6.5.2 timing parameter abbreviations . all timing abbreviations use lower case characters with upper case subscripts. the initial character is always "t" and is followed by four descripto rs. these characters s pecify two signal points arranged in a "from-to" sequence that define a timing interval. the two descriptors for each signal s pecify the signal name and the signal transition. thus the format is: t x x x x signal name from which interval is defined transition direction for first signal signal name to which interval is defined transition direction for second signal a. signal definitions: b. transition definitions: a = address h = transition to high d = data in l = transition to low q = data out v = transition to valid w = write enable x = transition to invalid or don't care e = chip enable z = transition to off (high impedance) g = output enable
standard microcircuit drawing defense supply center columbus columbus, ohio 43216-5000 size a 5962-38267 revision level g sheet 37 dscc form 2234 apr 97 6.5.3 waveforms . waveform symbol input output must be valid will be valid change from h to l will change from h to l change from l to h will change from l to h don't care any change permitted changing state unknown high impedance 6.6 sources of supply . 6.6.1 sources of supply for device classes q and v . sources of supply for device classes q and v are listed in qml-38535. the vendors listed in qml-38535 have submitted a certificate of compliance ( see 3.6 herein) to dscc-va and have agreed to this drawing. 6.6.2 approved sources of supply for device class m . approved sources of su pply for class m are listed in mil-hdbk-103. the vendors listed in mil-hdbk-1 03 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been submitted to and accepted by dscc-va.
standard microcircuit drawing source approval bulletin date: final preliminary as of 2 oct 01 approved sources of supply for smd 5962-38267 are listed below for immediate acquisition only and shall be added to mil-hdbk-1 03 and qml-38535 during the next revision. mil-bul-103 and qml-38535 will be revised to include the addition or deletion of sources. the vendors listed below have agreed to this drawing and a certificate of compliance has been submi tted to and accepted by dscc-va. this bulletin is superseded by the next dated revision of mil-bul-103 and qml-38535. | standard | vendor | vendor | | microcircuit drawing | cage | similar | | pin 1 / | number | pin 2 / | | | | | | 5962-3826701mxa | 1fn41 | at28c010-25bm/883 | | | 3 / | x28c010dmb-25 | | | 3/ | cm28c010-250 | | 5962-3826701mya | 1fn41 | at28c010-25lm/883 | | | 3/ | lm28c010-250 | | 5962-3826701mza | 1fn41 | at28c010-25fm/883 | | 5962-3826701mzc | 3 / | x28c010fmb-25 | | | 3/ | fm28c010-250 | | | | | | 5962-3826701mta | 1fn41 | at28c010-25um/883 | | | | | | | | | | 5962-3826701mua | 1fn41 | at28c010-25em/883 | | | | | | 5962-3826701mwc | 3 / | x28c010kmb-25 | | | 3/ | tm28c010-250 | | | | | | 5962-3826702mxa | 3 / | cm28c010h-250 | | | | | | | | | | 5962-3826702mya | 3 / | lm28c010h-250 | | | | | | | | | | 5962-3826702mza | 3 / | fm28c010h-250 | | | | | | | | | | 5962-3826702mwa | 3 / | tm28c010h-250 | | | | | | 5962-3826703mxa | 1fn41 | at28c010-20bm/883 | | | 3 / | x28c010dmb-20 | | | 3/ | cm28c010-200 | | 5962-3826703mya | 1fn41 | at28c010-20lm/883 | | | 3/ | lm28c010-200 | | 5962-3826703mza | 1fn41 | at28c010-20fm/883 | | 5962-3826703mzc | 3 / | x28c010fmb-20 | | | 3/ | fm28c010-200 | | | | | | 5962-3826703mta | 1fn41 | at28c010-20um/883 | | | | | | | | | | 5962-3826703mua | 1fn41 | at28c010-20em/883 | | | | | | 5962-3826703mwc | 3 / | x28c010kmb-20 | | | 3/ | tm28c010-200 | | | | | | 5962-3826704mxa | 3 / | cm28c010h-200 | | | | | | | | | | 5962-3826704mya | 3 / | lm28c010h-200 | | | | | see footnotes at end of list. 1 of 3
standardized military drawing source approval bulletin - continued. | | | | | standard | vendor | vendor | | microcircuit drawing | cage | similar | | pin 1 / | number | pin 2 / | | | | | | | | | | 5962-3826704mza | 3 / | fm28c010h-200 | | | | | | | | | | 5962-3826704mwa | 3 / | tm28c010h-200 | | | | | | 5962-3826705mxa | 1fn41 | at28c010-15bm/883 | | | 60395 | x28c010dmb-15 | | | 3/ | cm28c010-150 | | 5962-3826705mya | 1fn41 | at28c010-15lm/883 | | | 3/ | lm28c010-150 | | 5962-3826705mza | 1fn41 | at28c010-15fm/883 | | 5962-3826705mzc | 3 / | x28c010fmb-15 | | | 3/ | fm28c010-150 | | | | | | 5962-3826705mta | 1fn41 | at28c010-15um/883 | | | | | | | | | | 5962-3826705mua | 1fn41 | at28c010-15em/883 | | | | | | 5962-3826705mwc | 3 / | x28c010kmb-15 | | | 3/ | tm28c010-150 | | | | | | 5962-3826706mxa | 3 / | cm28c010h-150 | | | | | | | | | | 5962-3826706mya | 3 / | lm28c010h-150 | | | | | | | | | | 5962-3826706mza | 3 / | fm28c010h-150 | | | | | | | | | | 5962-3826706mwa | 3 / | tm28c010h-150 | | | | | | 5962-3826707mxa | 1fn41 | at28c010-12bm/883 | | | 60395 | x28c010dmb-12 | | | 3/ | cm28c010-120 | | | | | | 5962-3826707mya | 1fn41 | at28c010-12lm/883 | | | 3 / | lm28c010-120 | | | | | | | | | | 5962-3826707mta | 1fn41 | at28c010-15um/883 | | | | | | | | | | 5962-3826707mua | 1fn41 | at28c010-15em/883 | | | | | | | | | | 5962-3826707mza | 1fn41 | at28c010-12fm/883 | | 5962-3826707mzc | 3 / | x28c010fmb-12 | | | 3 / | fm28c010-120 | | | | | | 5962-3826707mwc | 3 / | x28c010kmb-12 | | | 3 / | tm28c010-120 | | | | | see footnotes at end of list. 2 of 3
standard microcircuit drawing source approval bulletin - continued. | | | | | standard | vendor | vendor | | microcircuit drawing | cage | similar | | pin 1 / | number | pin 2 / | | | | | | | | | | 5962-3826716qua | 0eu86 | as58c1001eca-25/883c | | 5962-3826716qma | 0eu86 | as58c1001f-25/883c | | 5962-3826716qmc | 68911 | 28c010tfb-25 | | 5962-3826716qna | 0eu86 | as58c1001sf-25/883c | | 5962-3826716q6c | 68911 | 28c010trpfb-25 | | 5962-3826716Q7C | 68911 | 28c011trpfb-25 | | | | | | | | | | 5962-3826717qua | 0eu86 | as58c1001eca-20/883c | | 5962-3826717qma | 0eu86 | as58c1001f-20/883c | | 5962-3826717qmc | 68911 | 28c010tfb-20 | | 5962-3826717qna | 0eu86 | as58c1001sf-20/883c | | 5962-3826717q6c | 68911 | 28c010trpfb-20 | | 5962-3826717q7c | 68911 | 28c011trpfb-20 | | | | | | | | | | 5962-3826718qua | 0eu86 | as58c1001eca-15/883c | | 5962-3826718qma | 0eu86 | as58c1001f-15/883c | | 5962-3826718qmc | 68911 | 28c010tfb-15 | | 5962-3826718qna | 0eu86 | as58c1001sf-15/883c | | 5962-3826718q6c | 68911 | 28c010trpfb-15 | | 5962-3826718q7c | 68911 | 28c011trpfb-15 | | | | | | | | | | 5962-3826719qmc | 68911 | 28c010tfb-12 | | 5962-3826719q6c | 68911 | 28c010trpfb-12 | | 5962-3826719q7c | 68911 | 28c011trpfb-12 | | | | | 1 / the lead finish shown for each pin representing a hermetic package is the most readily available from the manufacturer listed for that part. if the desired lead finish is not listed, contact the vendor to determine its availability. 2 / caution . do not use this number for item acquisition. items acquired to this number may not satisfy the performance requirements of this drawing. 3 / not available from an approved source. vendor cage vendor name number and address 1fn41 atmel corporation 2125 o'nel drive san jose, ca 95131 60395 xicor, incorporated 851 buckeye court milpitas, ca 95035 0eu86 austin semiconductor 8701 cross park drive austin, tx 78754-4566 68911 maxwell technologies 9244 balboa avenue san diego, ca 92123 the information contained herein is disseminated for convenience only and the government assumes no liability whatsoever for any inaccuracies in this information bulletin. 3 of 3

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